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? 2003 microchip technology inc. ds21662c-page 1 m features ? low supply current: 80 a (max) ? low dropout voltage: 140 mv (typ) @ 150 ma ? high output voltage accuracy: 0.4% (typ) ? standard or custom output voltages ? power-saving shutdown mode ? reference bypass input for ultra low-noise operation ? fast shutdown response time: 60 sec (typ) ? over-current protection ? space-saving 5-pin sot-23a package ? pin compatible upgrades for bipolar regulators ? wide operating temperature range: -40c to +125c applications ? battery operated systems ? portable computers ? medical instruments ? instrumentation ? cellular / gsm / phs phones ? linear post-regulator for smps ? pagers package type general description the tc2014, TC2015 and tc2185 are high-accuracy (typically 0.4%) cmos upgrades for bipolar low drop- out regulators, such as the lp2980. total supply cur- rent is typically 55 a; 20 to 60 times lower than in bipolar regulators. the key features of the device include low noise oper- ation (plus bypass reference), low dropout voltage ? typically 45 mv for the tc2014, 90 mv for the TC2015, and 140 mv for the tc2185, at full load ? and fast response to step changes in load. supply current is reduced to 0.5 a (max) and v out falls to zero when the shutdown input is low. the devices also incorporate over-current protection. the tc2014, TC2015 and tc2185 are stable with an output capacitor of 1 f and have a maximum output current of 50 ma, 100 ma and 150 ma, respectively. for higher output versions, see the tc1107 (ds21356), tc1108 (ds21357) and tc1173 (ds21362) (i out = 300 ma) datasheets. related literature ? application notes: an765, an766, an776 and an792 typical application tc2014 TC2015 tc2185 13 4 5 2 bypass gnd v out v in shdn 5-pin sot-23a 0.01 f reference bypass cap (optional) shutdown control (from power control logic) tc2014 TC2015 tc2185 v in 1 2 34 5 v in v out bypass shdn gnd v out 1f 1f + + tc2014/2015/2185 50 ma, 100 ma, 150 ma cmos ldos with shutdown and reference bypass
tc2014/2015/2185 ds21662c-page 2 ? 2003 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings ? input voltage ................................................................... 6.5v output voltage ....................................... (? 0.3) to (v in + 0.3) operating temperature ......................... ? 40c < t j < 125c storage temperature ................................. ? 65c to +150c maximum voltage on any pin ................ v in +0.3v to ? 0.3v maximum junction temperature ...................... ............ 150c ? notice: stresses above those listed under "maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. exposure to maximum rating conditions for extended periods may affect device reliability. pin function table name function v in unregulated supply input gnd ground terminal shdn shutdown control input bypass reference bypass input v out regulated voltage output electrical characteristics electrical specifications: unless otherwise specified, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. boldface type specifications apply for junction temperature of -40c to +125c. parameters sym min typ max units conditions input operating voltage v in 2.7 ? 6.0 v note 1 maximum output current i outmax 50 ? ? ma tc2014 100 ? ? TC2015 150 ? ? tc2185 output voltage v out v r - 2.0% v r 0.4% v r + 2.0% v note 2 v out temperature coefficient tcv out ?20?ppm/c note 3 ? 40 ? line regulation ? v out / ? v in ?0.05 0.5 %(v r + 1v) < v in < 6v load regulation (note 4) ? v out /v out -1.0 0.33 +1.0 % tc2014;TC2015: i l = 0.1 ma to i outmax -2.0 0.43 +2.0 tc2185: i l = 0.1 ma to i outmax note 4 dropout voltage v in - v out ?2?mv note 5 i l = 100 a ?45 70 i l = 50 ma ?90 140 TC2015; tc2185 i l = 100 ma ?140 210 tc2185 i l = 150 ma supply current i in ?55 80 a shdn = v ih , i l =0 shutdown supply current i insd ? 0.05 0.5 a shdn = 0v note 1: the minimum v in has to meet two conditions: v in = 2.7v and v in = v r + v dropout . 2: v r is the regulator output voltage setting. for example: v r = 1.8v, 2.7v, 2.8v, 2.85v, 3.0v, 3.3v. 3: 4: regulation is measured at a constant junction temperature using low duty cycle pulse testing. load regulation is tested over a load range from 1.0 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a v differential. 6: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. specifications are for a current pulse equal to i max at v in = 6v for t = 10 msec. 7: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. t a , t j , ja ). 8: time required for v out to reach 95% of v r (output voltage setting), after v shdn is switched from 0 to v in . tcv out v outmax v outmin ? () 10 6 ? v out t ? --------------------------------------------------------------------------- - =
? 2003 microchip technology inc. ds21662c-page 3 tc2014/2015/2185 power supply rejection ratio psrr ? 55 ? db f 1 khz, cbypass=0.01 f output short circuit current i outsc ? 160 300 ma v out = 0v thermal regulation ? v out / ? p d ?0.04? v/w note 6 , note 7 output noise en ? 200 ? nv/ hz i l = i outmax , f = 10 khz 470 pf from bypass to gnd response time, (note 8) (from shutdown mode) t r ?60?secv in = 4v, i l = 30 ma, c in = 1 f, c out = 10 f shdn input shdn input high threshold v ih 60 ??%v in v in = 2.5v to 6.0v shdn input low threshold v il ?? 15 %v in v in = 2.5v to 6.0v electrical characteristics (continued) electrical specifications: unless otherwise specified, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. boldface type specifications apply for junction temperature of -40c to +125c. parameters sym min typ max units conditions note 1: the minimum v in has to meet two conditions: v in = 2.7v and v in = v r + v dropout . 2: v r is the regulator output voltage setting. for example: v r = 1.8v, 2.7v, 2.8v, 2.85v, 3.0v, 3.3v. 3: 4: regulation is measured at a constant junction temperature using low duty cycle pulse testing. load regulation is tested over a load range from 1.0 ma to the maximum specified output current. changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a v differential. 6: thermal regulation is defined as the change in output voltage at a time t after a change in power dissipation is applied, excluding load or line regulation effects. specifications are for a current pulse equal to i max at v in = 6v for t = 10 msec. 7: the maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem- perature and the thermal resistance from junction-to-air (i.e. t a , t j , ja ). 8: time required for v out to reach 95% of v r (output voltage setting), after v shdn is switched from 0 to v in . tcv out v outmax v outmin ? () 10 6 ? v out t ? --------------------------------------------------------------------------- - =
tc2014/2015/2185 ds21662c-page 4 ? 2003 microchip technology inc. 2.0 typical performance curves note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-1: supply current vs. junction temperature. figure 2-2: load regulation vs. supply voltage. figure 2-3: output voltage vs. junction temperature (0.1 ma). figure 2-4: output voltage vs. junction temperature (150 ma). figure 2-5: output voltage vs. supply voltage. figure 2-6: dropout voltage vs. junction temperature. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 45.0 48.0 51.0 54.0 57.0 60.0 63.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) i dd (a) v r = 1.8v c out = 3.3 f v in = 2.8v v in = 6.0v -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 0.8 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 supply voltage (v) load regulation (%) v r = 1.8v c out = 3.3 f i l = 150 ma t a = +25c t a = +125c t a = -45c 1.790 1.795 1.800 1.805 1.810 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v in = 6.0v v in = 2.8v v r = 1.8v c out = 3.3 f i l = 0.1 ma 1.785 1.790 1.795 1.800 1.805 1.810 1.815 1.820 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v r = 1.8v c out = 3.3 f i l = 150 ma v in = 2.8v v in = 6.0v 1.785 1.79 1.795 1.8 1.805 1.81 1.815 1.82 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 supply voltage (v) output voltage (v) v r = 1.8v c out = 3.3 f i l = 150 ma t a = +25c t a = +125c t a = -45c 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) dropout voltage (v) v r = 1.8v c out = 3.3 f i l = 20 ma i l = 50 ma i l = 100 ma i l = 150 ma note: dropout voltage is not a tested parameter for 1.8v. v in (min) ! 2.7v
? 2003 microchip technology inc. ds21662c-page 5 tc2014/2015/2185 note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-7: supply current vs. junction temperature. figure 2-8: load regulation vs. supply voltage. figure 2-9: output voltage vs. junction temperature (0.1 ma). figure 2-10: output voltage vs. junction temperature (150 ma). figure 2-11: output voltage vs. supply voltage. figure 2-12: dropout voltage vs. junction temperature. 44.0 46.0 48.0 50.0 52.0 54.0 56.0 58.0 60.0 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature (c) i dd (a) v r = 2.7v c out = 3.3 f v in = 2.8v v in = 6.0v -0.5 -0.3 -0.1 0.1 0.3 0.5 3.7 4 4.3 4.6 4.9 5.2 5.5 5.8 supply voltage (v) load regulation (%) v r = 2.7v c out = 3.3 f i l = 150 ma t a = +25c t a = +125c t a = -45c 2.670 2.672 2.674 2.676 2.678 2.680 2.682 2.684 2.686 2.688 2.690 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v in = 6.0v v in = 3.7v v r = 2.7v c out = 3.3 f i l = 0.1 ma 2.665 2.670 2.675 2.680 2.685 2.690 2.695 2.700 2.705 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) v r = 2.7v c out = 3.3 f i l = 150 ma v in = 3.7v v in = 6.0v 2.665 2.67 2.675 2.68 2.685 2.69 2.695 2.7 2.705 3.7 4 4.3 4.6 4.9 5.2 5.5 5.8 supply voltage (v) output voltage (v) v r = 2.7v c out = 3.3 f i l = 150 ma t a = +25c t a = +125c t a = -45c 0.000 0.040 0.080 0.120 0.160 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) dropout voltage (v) v r = 2.7v c out = 3.3 f i l = 20 ma i l = 50 ma i l = 100 ma i l = 150 ma
tc2014/2015/2185 ds21662c-page 6 ? 2003 microchip technology inc. note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-13: supply current vs. junction temperature. figure 2-14: output voltage vs. junction temperature (150 ma). figure 2-15: load regulation vs. junction temperature. figure 2-16: dropout voltage vs. junction temperature. figure 2-17: load transient response. (c out = 1 f). figure 2-18: load transient response. (c out = 10 f). 45 48 51 54 57 60 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) i dd (a) v r = 5.0v c out = 3.3 f v in = 6.0v 4.93 4.94 4.95 4.96 4.97 4.98 4.99 5.00 5.01 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) output voltage (v) i l = 100 ma v r = 5.0v c out = 3.3 f v in = 6.0v i l = 150 ma i l = 0.1 ma -0.40 -0.30 -0.20 -0.10 0.00 0.10 0.20 0.30 0.40 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) load regulation (%) v r = 5.0v c out = 3.3 f v in = 6.0 v i l = 50 ma i l = 100 ma i l = 150 ma 0.00 0.02 0.04 0.06 0.08 0.10 0.12 -40 -25 -10 5 20 35 50 65 80 95 110 125 junction temperature (c) dropout voltage (v) v r = 5.0v c out = 3.3 f i l = 50 ma i l = 100 ma i l = 150 ma 150ma load 100ma load current 100mv/div v in = 3.8v v out = 2.8v c in = 1 f ceramic c out = 1 f ceramic frequency = 1 khz v out 150ma load 100ma load current 100mv / div v in = 3.0v v out = 2.8v c in = 1 f ceramic c out = 10 f ceramic frequency = 10 khz v out
? 2003 microchip technology inc. ds21662c-page 7 tc2014/2015/2185 note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-19: line transient response. (c out = 1 f). figure 2-20: load transient response in dropout. (c out = 10 f). figure 2-21: shutdown delay time. figure 2-22: wake-up response. figure 2-23: psrr vs. frequency (c out = 1 f ceramic). figure 2-24: psrr vs. frequency (c out = 10 f ceramic). 100ma 150ma v out 100mv/div v in = 3.105v v out = 3.006v c in = 1 f ceramic c out = 10 f ceramic r load = 20 ? -70 -60 -50 -40 -30 -20 -10 0 10 100 1000 10000 100000 100000 0 frequency (hz) power supply ripple rejection (db) v in = 4.0v v inac = 100 mv v outdc = 3.0v c out = 1f ceramic c bypass = 0.01 f ceramic i out = 50 ma i out = 150 ma i out = 100 ma 10 100 1k 10k 100k 1m -70 -60 -50 -40 -30 -20 -10 0 10 100 1000 10000 100000 100000 0 frequency (hz) power supply ripple rejection (db) v in = 4.0v v inac = 100 mv v outdc = 3.0v c out = 10 f ceramic c bypass = 0.01 f ceramic i out = 150 ma i out = 100 ma 10 100 1k 10k 100k 1m
tc2014/2015/2185 ds21662c-page 8 ? 2003 microchip technology inc. note: unless otherwise indicated, v in = v r + 1v, i l = 100 a, c out = 3.3 f, shdn > v ih , t a = +25c. figure 2-25: psrr vs. frequency (c out = 10 f tantalum). figure 2-26: output noise vs. frequency. -70 -60 -50 -40 -30 -20 -10 0 10 100 1000 10000 100000 100000 0 frequency (hz) power supply ripple rejection (db) v in = 4.0v v inac = 100 mv v outdc = 3.0v c out = 10 f tantalum i out = 150 ma c bypass = 0.01 f c bypass = 0 f 10 100 1k 10k 100k 1m 0.001 0.010 0.100 1.000 10.000 10 100 1000 10000 100000 100000 0 frequency (hz) noise (mv/ ? hz) v in = 4.0v v outdc = 3.0v i out = 100 a c bypass = 470 pf c out = 10 f c out = 1 f 10 100 1k 10k 100k 1m 1 0.1 0.10
? 2003 microchip technology inc. ds21662c-page 9 tc2014/2015/2185 3.0 pin descriptions the descriptions of the pins are described in table 3-1. table 3-1: pin function table 3.1 unregulated supply input (v in ) connect unregulated input supply to the v in pin. if there is a large distance between the input supply and the ldo regulator some input capacitance is neces- sary for proper operation. a 1 f capacitor connected from v in to ground is recommended for most applications. 3.2 ground terminal (gnd) connect the unregulated input supply ground return to gnd. also connect one side of the 1 f typical input decoupling capacitor close to this pin and one side of the output capacitor c out to this pin. 3.3 shutdown control input (shdn ) the regulator is fully enabled when a logic high is applied to shdn . the regulator enters shutdown when a logic low is applied to this input. during shutdown, output voltage falls to zero and supply current is reduced to 0.5 a (max). 3.4 reference bypass input (bypass) connecting a low value ceramic capacitor to this pin will further reduce output voltage noise and improve the power supply ripple rejection (psrr) performance of the ldo. typical values from 470 pf to 0.01 f are suggested. smaller and larger values can be used but do affect the speed at which the ldo output voltage rises when input power is applied. the larger the bypass capacitor, the slower the output voltage will rise. 3.5 regulated voltage output (v out ) connect the output load to v out of the ldo. also con- nect one side of the ldo output de coupling capacitor as close as possible to the v out pin. pin no. symbol description 1v in unregulated supply input 2 gnd ground terminal 3 shdn shutdown control input 4 bypass reference bypass input 5v out regulated voltage output
tc2014/2015/2185 ds21662c-page 10 ? 2003 microchip technology inc. 4.0 detailed description the tc2014, TC2015 and tc2185 are precision fixed output voltage regulators (if an adjustable version is needed, see the tc1070, tc1071 or tc1187 (ds21353) datasheet.) unlike bipolar regulators, the tc2014, TC2015 and tc2185 supply current does not increase with load current. in addition, the ldo output voltage is stable using 1 f of ceramic or tantalum capacitance over the entire specified input voltage range and output current range. figure 4-1 shows a typical application circuit. the reg- ulator is enabled any time the shutdown input (shdn ) is at or above v ih , and disabled (shutdown) when shdn is at or below v il . shdn may be controlled by a cmos logic gate or i/o port of a microcontroller. if the shdn input is not required, it should be connected directly to the input supply. while in shutdown, supply current decreases to 0.05 a (typical) and v out falls to zero volts. figure 4-1: typical application circuit. 4.1 bypass input a 0.01 f ceramic capacitor connected from the bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. if output noise is not a concern, this input may be left unconnected. larger capacitor values may be used, but the result is a longer time period to rated output voltage when power is initially applied. 4.2 output capacitor a 1 f (min) capacitor from v out to ground is required. the output capacitor should have an esr (effective series resistance) of 0.01 ? to 5 ? for v out 2.5v, and 0.05 ? . to 5 ? for v out < 2.5v. ceramic, tantalum or alu- minum electrolytic capacitors can be used. when using ceramic capacitors, x5r and x7r dielectric material are recommended due to their stable tolerance over temperature. however, other dielectrics can be used as long as the minimum output capacitance is maintained. 4.3 input capacitor a 1 f capacitor should be connected from v in to gnd if there is more than 10 inches of wire between the reg- ulator and this ac filter capacitor, or if a battery is used as the power source. aluminum, electrolytic or tanta- lum capacitors can be used (since many aluminum electrolytic capacitors freeze at approximately -30c, solid tantalum are recommended for applications oper- ating below -25c). when operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques. 0.01 f reference bypass cap (optional) shutdown control (from power control logic) tc2014 TC2015 tc2185 v in 1 2 34 5 v out bypass shdn gnd v out 1f 1f battery + + +
? 2003 microchip technology inc. ds21662c-page 11 tc2014/2015/2185 5.0 thermal considerations 5.1 power dissipation the amount of power the regulator dissipates is prima- rily a function of input voltage, output voltage and output current. the following equation is used to calculate worst-case power dissipation: equation the maximum allowable power dissipation (p dmax ) is a function of the maximum ambient temperature (t amax ), the maximum allowable die temperature (t jmax ) (+125c) and the thermal resistance from junc- tion-to-air ( ja ). the 5-pin sot-23a package has a ja of approximately 220c/watt when mounted on a typical two layer fr4 dielectric copper clad pc board. equation the p d equation can be used in conjunction with the p dmax equation to ensure regulator thermal operation is within limits. for example: actual power dissipation: maximum allowable power dissipation: in this example, the tc2014 dissipates a maximum of only 26.7 mw; far below the allowable limit of 318 mw. in a similar manner, the p d equation and p dmax equa- tion can be used to calculate maximum current and/or input voltage limits. 5.2 layout considerations the primary path of heat conduction out of the package is via the package leads. therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower ja and, therefore, increase the maximum allowable power dissipation limit. p d v inmax v outmin ? () i lmax where: p d = worst-case actual power dissipation v inmax = maximum voltage on v in v outmin = minimum regulator output voltage i lmax = maximum output (load) current where all terms are previously defined. p dmax t jmax t amax ? ja -------------------------------------- - = given: v inmax = 3.0v +10% v outmin = 2.7v ? 2.5% i loadmax =40ma t jmax = +125c t amax =+55c find: 1. actual power dissipation 2. maximum allowable dissipation p d v inmax v outmin ? () i lmax = 3.0 1.1 () 2.7 0.975 () ? [] 40 10 3 ? 220 -------------------------------------------------------------------------------------------- = 26.7mw = p dmax t jmax t amax ? ja -------------------------------------- - = 125 55 ? 220 -------------------- - = 318mw =
tc2014/2015/2185 ds21662c-page 12 ? 2003 microchip technology inc. 6.0 packaging information 6.1 package marking information c & d represents part number code + temperature range and voltage (v) tc2014 TC2015 tc2185 1.8 pa ra ua 2.5 pb rb ub 2.7 pc rc uc 2.8 pd rd ud 2.85 pe re ue 3.0 pf rf uf 3.3 pg rg ug e represents year and 2-month period code f represents lot id number cdef
? 2003 microchip technology inc. ds21662c-page 13 tc2014/2015/2185 5-lead plastic small outline transistor (ot) (sot23) 10 5 0 10 5 0 mold draft angle bottom 10 5 0 10 5 0 mold draft angle top 0.50 0.43 0.35 .020 .017 .014 b lead width 0.20 0.15 0.09 .008 .006 .004 c lead thickness 10 5 0 10 5 0 foot angle 0.55 0.45 0.35 .022 .018 .014 l foot length 3.10 2.95 2.80 .122 .116 .110 d overall length 1.75 1.63 1.50 .069 .064 .059 e1 molded package width 3.00 2.80 2.60 .118 .110 .102 e overall width 0.15 0.08 0.00 .006 .003 .000 a1 standoff 1.30 1.10 0.90 .051 .043 .035 a2 molded package thickness 1.45 1.18 0.90 .057 .046 .035 a overall height 1.90 .075 p1 outside lead pitch (basic) 0.95 .038 p pitch 5 5 n number of pins max nom min max nom min dimension limits millimeters inches* units 1 p d b n e e1 l c a2 a a1 p1 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: mo-178 drawing no. c04-091 significant characteristic
tc2014/2015/2185 ds21662c-page 14 ? 2003 microchip technology inc. notes:
? 2003 microchip technology inc. ds21662c-page15 tc2014/2015/2185 product identification system to order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office . sales and support data sheets products supported by a preliminary data sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. to determine if an errata sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip corporate literature center u.s. fax: (480) 792-7277 3. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products. part no. -xx x temperature output voltage device device: tc2014: 50 ma ldo with shutdown and vref bypass TC2015: 100 ma ldo with shutdown and vref bypass tc2185: 150 ma ldo with shutdown and vref bypass output voltage: xx = 1.8v xx = 2.7v xx = 2.8v xx = 3.0v xx = 3.3v temperature range: v = -40c to +125c package: cttr = plastic small outline transistor (sot-23), 5-lead, tape and reel examples: a) tc2014-1.8vcttr:5ld sot-23-a, 1.8v, tape and reel. b) tc2014-2.85vcttr: 5ld sot-23-a, 2.85v, tape and reel. c) tc2014-3.3vcttr: 5ld sot-23-a, 3.3v, tape and reel. a) TC2015-1.8vcttr: 5ld sot-23-a, 1.8v, tape and reel. b) TC2015-2.85vcttr: 5ld sot-23-a, 2.85v, tape and reel. c) TC2015-3.0vcttr: 5ld sot-23-a, 3.0v, tape and reel. a) tc2185-1.8vcttr: 5ld sot-23-a, 1.8v, tape and reel. b) tc2185-2.8vcttr: 5ld sot-23-a, 2.8v, tape and reel. range xxxx package
tc2014/2015/2185 ds21662c-page 16 ? 2003 microchip technology inc. notes:
? 2003 microchip technology inc. ds21662c - page 17 information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warranty is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchip?s products as critical components in life support systems is not authorized except with express written approval by microchip. no licenses are conveyed, implicitly or otherwise, under any intellectual property rights. trademarks the microchip name and logo, the microchip logo, k ee l oq , mplab, pic, picmicro, picstart, pro mate and powersmart are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, micro id , mxdev, mxlab, picmaster, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. accuron, dspic, dspicdem.net, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, microport, migratable memory, mpasm, mplib, mplink, mpsim, picc, pickit, picdem, picdem.net, powercal, powerinfo, powertool, rfpic, select mode, smartsensor, smartshunt, smarttel and total endurance are trademarks of microchip technology incorporated in the u.s.a. and other countries. serialized quick turn programming (sqtp) is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2003, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. microchip received qs-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona in july 1999 and mountain view, california in march 2002. the company?s quality system processes and procedures are qs-9000 compliant for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperipherals, non-volatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001 certified. note the following details of the code protection feature on microchip devices: ? microchip products meet the specification contained in their particular microchip data sheet. ? microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specifications contained in microchip's data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconductor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s code protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that ac t.
ds21662c-page 18 ? 2003 microchip technology inc. m americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: 480-792-7627 web address: http://www.microchip.com rocky mountain 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7966 fax: 480-792-4338 atlanta 3780 mansell road, suite 130 alpharetta, ga 30022 tel: 770-640-0034 fax: 770-640-0307 boston 2 lan drive, suite 120 westford, ma 01886 tel: 978-692-3848 fax: 978-692-3821 chicago 333 pierce road, suite 180 itasca, il 60143 tel: 630-285-0071 fax: 630-285-0075 dallas 4570 westgrove drive, suite 160 addison, tx 75001 tel: 972-818-7423 fax: 972-818-2924 detroit tri-atria office building 32255 northwestern highway, suite 190 farmington hills, mi 48334 tel: 248-538-2250 fax: 248-538-2260 kokomo 2767 s. albright road kokomo, indiana 46902 tel: 765-864-8360 fax: 765-864-8387 los angeles 18201 von karman, suite 1090 irvine, ca 92612 tel: 949-263-1888 fax: 949-263-1338 san jose microchip technology inc. 2107 north first street, suite 590 san jose, ca 95131 tel: 408-436-7950 fax: 408-436-7955 toronto 6285 northam drive, suite 108 mississauga, ontario l4v 1x5, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific australia microchip technology australia pty ltd suite 22, 41 rawson street epping 2121, nsw australia tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing microchip technology consulting (shanghai) co., ltd., beijing liaison office unit 915 bei hai wan tai bldg. no. 6 chaoyangmen beidajie beijing, 100027, no. china tel: 86-10-85282100 fax: 86-10-85282104 china - chengdu microchip technology consulting (shanghai) co., ltd., chengdu liaison office rm. 2401-2402, 24th floor, ming xing financial tower no. 88 tidu street chengdu 610016, china tel: 86-28-86766200 fax: 86-28-86766599 china - fuzhou microchip technology consulting (shanghai) co., ltd., fuzhou liaison office unit 28f, world trade plaza no. 71 wusi road fuzhou 350001, china tel: 86-591-7503506 fax: 86-591-7503521 china - hong kong sar microchip technology hongkong ltd. unit 901-6, tower 2, metroplaza 223 hing fong road kwai fong, n.t., hong kong tel: 852-2401-1200 fax: 852-2401-3431 china - shanghai microchip technology consulting (shanghai) co., ltd. room 701, bldg. b far east international plaza no. 317 xian xia road shanghai, 200051 tel: 86-21-6275-5700 fax: 86-21-6275-5060 china - shenzhen microchip technology consulting (shanghai) co., ltd., shenzhen liaison office rm. 1812, 18/f, building a, united plaza no. 5022 binhe road, futian district shenzhen 518033, china tel: 86-755-82901380 fax: 86-755-82966626 china - qingdao rm. b503, fullhope plaza, no. 12 hong kong central rd. qingdao 266071, china tel: 86-532-5027355 fax: 86-532-5027205 india microchip technology inc. india liaison office divyasree chambers 1 floor, wing a (a3/a4) no. 11, o?shaugnessey road bangalore, 560 025, india tel: 91-80-2290061 fax: 91-80-2290062 japan microchip technology japan k.k. benex s-1 6f 3-18-20, shinyokohama kohoku-ku, yokohama-shi kanagawa, 222-0033, japan tel: 81-45-471- 6166 fax: 81-45-471-6122 korea microchip technology korea 168-1, youngbo bldg. 3 floor samsung-dong, kangnam-ku seoul, korea 135-882 tel: 82-2-554-7200 fax: 82-2-558-5934 singapore microchip technology singapore pte ltd. 200 middle road #07-02 prime centre singapore, 188980 tel: 65-6334-8870 fax: 65-6334-8850 ta iw a n microchip technology (barbados) inc., taiwan branch 11f-3, no. 207 tung hua north road taipei, 105, taiwan tel: 886-2-2717-7175 fax: 886-2-2545-0139 europe austria microchip technology austria gmbh durisolstrasse 2 a-4600 wels austria tel: 43-7242-2244-399 fax: 43-7242-2244-393 denmark microchip technology nordic aps regus business centre lautrup hoj 1-3 ballerup dk-2750 denmark tel: 45 4420 9895 fax: 45 4420 9910 france microchip technology sarl parc d?activite du moulin de massy 43 rue du saule trapu batiment a - ler etage 91300 massy, france tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany microchip technology gmbh steinheilstrasse 10 d-85737 ismaning, germany tel: 49-89-627-144 0 fax: 49-89-627-144-44 italy microchip technology srl centro direzionale colleoni palazzo taurus 1 v. le colleoni 1 20041 agrate brianza milan, italy tel: 39-039-65791-1 fax: 39-039-6899883 united kingdom microchip ltd. 505 eskdale road winnersh triangle wokingham berkshire, england rg41 5tu tel: 44 118 921 5869 fax: 44-118 921-5820 12/05/02 w orldwide s ales and s ervice

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